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參數(shù)資料
| 型號(hào)： | 934054906135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2.3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封裝： | PLASTIC, SMD, SMA, PMOS, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 66K |
| 代理商： | 934054906135 |
1998 Nov 25
2
Philips Semiconductors
Product specication
Fast soft-recovery rectier
BYG85B
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
UL 94V-O classified plastic
package
Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
Top view
Side view
cathode
band
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
100
V
VR
continuous reverse voltage
100
V
IF(AV)
average forward current
Ttp = 100 °C; averaged over any
20 ms period; see Figs 2 and 7
2.5
A
IF(AV)
average forward current
Tamb =60 °C; AL2O3 PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
1.3
A
IF(AV)
average forward current
Tamb =60 °C; epoxy PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
0.98
A
IFRM
repetitive peak forward current
Ttp = 100 °C; see Fig.3
23
A
IFRM
repetitive peak forward current
Tamb =60 °C; AL2O3 PCB mounting;
see Fig.5
12
A
IFRM
repetitive peak forward current
Tamb =60 °C; epoxy PCB mounting;
see Fig.6
8.5
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
35
A
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+175
°C
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