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參數(shù)資料
| 型號(hào)： | 934054727185 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.15 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, EMT3, SC-75, SMPAK-3 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | 934054727185 |
1997 Dec 19
3
Philips Semiconductors
Product specication
High-speed double diode
BAV70T
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
0.715
V
IF = 10 mA
0.855
V
IF =50mA
1
V
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR = 25 V
30
nA
VR =75V
2
A
VR = 25 V; Tj = 150 °C60
A
VR = 75 V; Tj = 150 °C
100
A
Cd
diode capacitance
VR = 0; f = 1 MHz; see Fig.6
1.5
pF
trr
reverse recovery time
switching from IF = 10 mA to IR =10mA;
RL = 100 ; measured at IR = 1 mA; see Fig.7
4ns
Vfr
forward recovery voltage
switched to IF = 10 mA; tr = 20 ns; see Fig.8
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
one diode loaded
350
K/W
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