參數(shù)資料
型號: 934054727185
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.15 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: PLASTIC, SMD, EMT3, SC-75, SMPAK-3
文件頁數(shù): 5/12頁
文件大?。?/td> 72K
代理商: 934054727185
1997 Dec 19
2
Philips Semiconductors
Product specication
High-speed double diode
BAV70T
FEATURES
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
Two high-speed switching diodes in a
common cathode configuration,
fabricated in planar technology, in a
very small rectangular SMD SOT416
(SC-75) package.
PINNING
PIN
DESCRIPTION
1
anode 1
2
anode 2
3
common cathode
Fig.1 Simplified outline (SOT416; SC-75) and symbol.
Marking code: A4.
handbook, halfpage
12
3
MAM368
3
12
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode (unless otherwise specied)
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
Ts =90 °C; see Fig.2
single diode loaded
150
mA
both diodes loaded
75
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
s
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Ts =90 °C; one diode loaded
170
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
+150
°C
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