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參數資料
| 型號： | 934054711215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數： | 8/12頁 |
| 文件大?。?/td> | 643K |
| 代理商： | 934054711215 |
2000 Jul 19
5
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH101
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID =10 A60
V
VGSth
gate-source threshold voltage
VGS =VDS; ID = 1 mA
1
V
IDSS
drain-source leakage current
VGS = 0; VDS =48V
100
nA
IGSS
gate leakage current
VGS = ±20 V; VDS =0
±100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.35 A
0.81
VGS = 4.5 V; ID = 0.175 A
0.93
Ciss
input capacitance
VGS = 0; VDS =48V; f=1MHz
72.2
pF
Coss
output capacitance
VGS = 0; VDS =48V; f=1MHz
11.3
pF
Crss
reverse transfer capacitance
VGS = 0; VDS =48V; f=1MHz
3.6
pF
QG
total gate charge
VGS = 10 V; VDD =30V;
ID = 0.35 A; Tamb =25 °C
2130
pC
QGS
gate-source charge
VDD =30V; ID = 0.35 A;
Tamb =25 °C
150
pC
QGD
gate-drain charge
VDD =30V; ID = 0.35 A;
Tamb =25 °C
695
pC
Switching times
td(on)
turn-on delay time
VGS = 0 to 10 V; VDD =30V;
ID = 0.35 A; Rgen =6
3.5
ns
tf
fall time
VGS = 0 to 10 V; VDD =30V;
ID = 0.35 A; Rgen =6
3.5
ns
ton
turn-on switching time
VGS = 0 to 10 V; VDD =30V;
ID = 0.35 A; Rgen =6
7
ns
td(off)
turn-off delay time
VGS =10to0V; VDD =30V;
ID = 0.35 A; Rgen =6
9
ns
tr
rise time
VGS =10to0V; VDD =30V;
ID = 0.35 A; Rgen =6
4.5
ns
toff
turn-off switching time
VGS =10to0V; VDD =30V;
ID = 0.35 A; Rgen =6
13.5
ns
Source-drain diode
VSD
source-drain diode forward
voltage
VGD = 0; IS = 0.5 A
1V
trr
reverse recovery time
IS = 0.5 A; di/dt = 10 A/s
35
ns
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