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參數(shù)資料
| 型號： | 934054711215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 643K |
| 代理商： | 934054711215 |
2000 Jul 19
3
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH101
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
60
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Ts =80 °C; note 1
0.7
A
IDM
peak drain current
note 2
2.8
A
Ptot
total power dissipation
Ts =80 °C
0.5
W
Tamb =25 °C; note 3
0.75
W
Tamb =25 °C; note 4
0.54
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
IS
source current (DC)
Ts =80 °C
0.5
A
ISM
peak pulsed source current
note 2
2A
Fig.2 Power derating curve.
handbook, halfpage
0
40
80
160
0.6
0.2
0
0.4
MGM190
120
Ptot
(W)
TS (°C)
Fig.3 SOAR.
δ = 0.01; Ts =80 °C.
(1) RDSon limitation.
handbook, halfpage
MGM191
10
1
110
103
102
101
102
101
VDS (V)
IDS
(A)
t p
T
P
t
t p
T
δ =
DC
(1)
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