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參數(shù)資料
| 型號： | 934054570118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 147K |
| 代理商： | 934054570118 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP21N06LT, PHB21N06LT
Logic level FET
PHD21N06LT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
-
19
A
(body diode)
I
SM
Pulsed source current (body
-
76
A
diode)
V
SD
Diode forward voltage
I
F = 20 A; VGS = 0 V
-
1.2
1.5
V
t
rr
Reverse recovery time
I
F = 20 A; -dIF/dt = 100 A/s;
-
43
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 30 V
-
94
-
nC
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); conditions: VGS ≥ 5 V
Fig.3. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
0.1
1
10
100
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
August 1999
3
Rev 1.500
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