參數資料
型號: 934054570118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D2PAK-3
文件頁數: 13/13頁
文件大小: 147K
代理商: 934054570118
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP21N06LT, PHB21N06LT
Logic level FET
PHD21N06LT
MECHANICAL DATA
Fig.19. SOT428 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT428
98-04-07
0
10
20 mm
scale
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
E
b2
D1
wA
M
bc
b1
L1
L
13
2
D
E1
HE
L2
Note
1. Measured from heatsink back to lead.
e1
e
A
A2
A
A1
y
seating plane
mounting
base
A1
(1)
D
max.
b
D1
max.
E
max.
HE
max.
w
y
max.
A2
b2
b1
max.
c
E1
min.
ee1
L1
min.
L2
L
A
max.
UNIT
DIMENSIONS (mm are the original dimensions)
0.2
mm
2.38
2.22
0.65
0.45
0.89
0.71
0.89
0.71
1.1
0.9
5.36
5.26
0.4
0.2
6.22
5.98
4.81
4.45
2.285
4.57
10.4
9.6
0.5
0.7
0.5
6.73
6.47
4.0
2.95
2.55
August 1999
9
Rev 1.500
相關PDF資料
PDF描述
934054560127 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB
934055349118 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
05G4B48 Silicon Diffused Type Rectifier Stack
934054590135 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
934054610135 3.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
934054713215 制造商:NXP Semiconductors 功能描述:SUB ONLY TXSTR
934054900215 制造商:NXP Semiconductors 功能描述:SUB ONLY TXSTR SGNL
934054930215 制造商:NXP Semiconductors 功能描述:Diode Schottky 40V 0.2A 3-Pin TO-236AB T/R
934054945115 制造商:NXP Semiconductors 功能描述:Diode Switching 100V 0.25A 2-Pin SOD-323 T/R
934055092127 制造商:NXP Semiconductors 功能描述:H-OUT #7460