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參數(shù)資料
| 型號： | 934054560127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 147K |
| 代理商： | 934054560127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP21N06LT, PHB21N06LT
Logic level FET
PHD21N06LT
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Maximum permissible non-repetitive
AS) versus avalanche time (tAV);
unclamped inductive load
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
Gate-source voltage, VGS (V)
minimum
typical
maximum
0
5
10
15
20
25
30
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
10
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
0.1
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
02468
10
12
14
16
18
20
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 20A
Tj = 25 C
VDD = 11 V
VDD = 44 V
August 1999
5
Rev 1.500
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