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參數(shù)資料
| 型號(hào)： | 934054560127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 147K |
| 代理商： | 934054560127 |
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Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP21N06LT, PHB21N06LT
Logic level FET
PHD21N06LT
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 9.7 A;
-
34
mJ
energy
t
p = 100 s; Tj prior to avalanche = 25C;
V
DD ≤ 25 V; RGS = 50 ; VGS = 5 V; refer to
fig:15
I
AS
Peak non-repetitive
-
19
A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction
-
2.7
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT78 package, in free air
60
-
K/W
to ambient
SOT428 and SOT404 package, pcb
50
-
K/W
mounted, minimum footprint
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
V
voltage
T
j = -55C
50
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1.0
1.5
2.0
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 10 A
-
55
70
m
resistance
V
GS = 5 V; ID = 10 A
-
60
75
m
T
j = 175C
-
158
m
g
fs
Forward transconductance
V
DS = 25 V; ID = 10 A
5
13
-
S
I
GSS
Gate source leakage current V
GS = ±5 V; VDS = 0 V
-
10
100
nA
I
DSS
Zero gate voltage drain
V
DS = 55 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 175C
-
500
A
Q
g(tot)
Total gate charge
I
D = 20 A; VDD = 44 V; VGS = 5 V
-
9.4
-
nC
Q
gs
Gate-source charge
-
2.2
-
nC
Q
gd
Gate-drain (Miller) charge
-
5.4
-
nC
t
d on
Turn-on delay time
V
DD = 30 V; RD = 1.2 ;-
7
15
ns
t
r
Turn-on rise time
R
G = 10 ; VGS = 5 V
-
88
120
ns
t
d off
Turn-off delay time
Resistive load
-
25
40
ns
t
f
Turn-off fall time
-
25
45
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
(SOT78 package only)
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
466
650
pF
C
oss
Output capacitance
-
95
135
pF
C
rss
Feedback capacitance
-
71
85
pF
August 1999
2
Rev 1.500
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