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參數(shù)資料
| 型號： | 934051230112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 53K |
| 代理商： | 934051230112 |
2001 Nov 02
5
Philips Semiconductors
Product specication
750 MHz, 18.5 dB gain power doubler amplier
BGD702N
Table 3
Bandwidth 40 to 550 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 493.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 548.5 MHz.
2. Measured according to DIN45004B:
fp = 540.25 MHz; Vp =Vo;
fq = 547.25 MHz; Vq =Vo 6 dB;
fr = 549.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 538.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18
19
dB
f = 550 MHz
18.5
dB
SL
slope cable equivalent
f = 40 to 550 MHz
0.2
2
dB
FL
atness of frequency response
f = 40 to 550 MHz
±0.2
dB
S11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
19
dB
f = 160 to 320 MHz
18
dB
f = 320 to 550 MHz
17
dB
S22
output return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
19
dB
f = 160 to 320 MHz
18
dB
f = 320 to 550 MHz
17
dB
S21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
77 channels at;
measured at 547.25 MHz
67
dB
Xmod
cross modulation
77 channels at;
Vo = 44 dBmV;
measured at 55.25 MHz
67
dB
CSO
composite second order
distortion
77 channels at;
Vo = 44 dBmV;
measured at 548.5 MHz
62
dB
d2
second order distortion
note 1
72
dB
Vo
output voltage
dim = 60 dB; note 2
64.5
dBmV
F
noise gure
see Table 1
dB
Itot
total current consumption (DC)
note 3
435
mA
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