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參數(shù)資料
| 型號： | 934051230112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 934051230112 |
2001 Nov 02
3
Philips Semiconductors
Product specication
750 MHz, 18.5 dB gain power doubler amplier
BGD702N
CHARACTERISTICS
Table 1
Bandwidth 40 to 750 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 746.5 MHz.
2. Measured according to DIN45004B:
fp = 740.25 MHz; Vp =Vo;
fq = 747.25 MHz; Vq =Vo 6 dB;
fr = 749.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 738.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18
19
dB
f = 750 MHz
18.5
dB
SL
slope cable equivalent
f = 40 to 750 MHz
0.2
2
dB
FL
atness of frequency response
f = 40 to 750 MHz
±0.25
dB
S11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
19
dB
f = 160 to 320 MHz
18
dB
f = 320 to 640 MHz
17
dB
f = 640 to 750 MHz
16
dB
S22
output return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
19
dB
f = 160 to 320 MHz
18
dB
f = 320 to 640 MHz
17
dB
f = 640 to 750 MHz
16
dB
S21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
110 channels at; Vo = 44 dBmV;
measured at 745.25 MHz
58
dB
Xmod
cross modulation
110 channels at; Vo = 44 dBmV;
measured at 55.25 MHz
62
dB
CSO
composite second order
distortion
110 channels at; Vo = 44 dBmV;
measured at 746.5 MHz
58
dB
d2
second order distortion
note 1
68
dB
Vo
output voltage
dim = 60 dB; note 2
61
dBmV
F
noise gure
f = 50 MHz
5.5
dB
f = 450 MHz
6.5
dB
f = 550 MHz
6.5
dB
f = 600 MHz
7dB
f = 750 MHz
8.5
dB
Itot
total current consumption (DC)
note 3
435
mA
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