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| 型號： | 934051090115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SMD, SC-75, SMPAK-3 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 78K |
| 代理商： | 934051090115 |
2000 Nov 15
4
Philips Semiconductors
Product specication
PNP general purpose transistors
BC856T; BC857T series
GRAPHICAL INFORMATION BC857AT
handbook, halfpage
0
200
300
400
500
hFE
100
MGT711
102
101
1
10
102
103
IC (mA)
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
VCE = 5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT712
102
101
1
10
102
103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
VCE = 5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MGT713
101
1
10
102
103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT714
101
1
10
102
103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
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