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參數(shù)資料
| 型號： | 934050520135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 7.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 88K |
| 代理商： | 934050520135 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7880-55
Standard level FET
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 7 A; parameter VDS
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Normalised avalanche energy rating.
W
DSS% = f(Tsp); conditions: ID = 2.5 A
Fig.16. Avalanche energy test circuit.
01
23
45
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
0
0.5
1
1.5
2
0
10
20
30
40
IF/A
VSDS/V
Tj/V =
150
25
0.01
0.1
1
10
100
0
.1
.2
.3
.4
.5
.6
.7
.8
.9
1
Thousands
pF
VDS/V
Ciss
Coss
Crss
20
40
60
80
100
120
140
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
5
10
15
0
2
4
6
8
10
12
VDS/V
QG/nC
VDS = 14V
VDS = 44V
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
W
DSS = 0.5 LID
2
BV
DSS/(BVDSS VDD)
April 1998
5
Rev 1.100
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