參數(shù)資料
型號: 934050520135
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 7.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 6/11頁
文件大?。?/td> 88K
代理商: 934050520135
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7880-55
Standard level FET
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 5 A; VGS = 10 V
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
02
46
8
10
0
10
20
30
40
ID/A
VDS/V
16
12
10
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
0
5
10
15
20
2
3
4
5
6
7
8
9
gfs/S
ID/A
0
5
10
15
20
25
30
60
70
80
90
100
110
120
130
RDS(ON)/mOhm
6
6.5
7
8
9
10
ID/A
BUK98XX-55
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
Tmb / degC
Rds(on) normalised to 25degC
a
01
23456789
0
5
10
15
20
ID/A
VGS/V
Tj/C =
150
25
BUK78xx-55
-100
-50
0
50
100
150
200
0
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
April 1998
4
Rev 1.100
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