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參數(shù)資料
| 型號： | 934050210127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 934050210127 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AI
STATIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
2.0
mA
T
j = 125 C
I
EBO
Emitter cut-off current
V
EB = 9.0 V; IC = 0 A
-
10.0
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
450
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 2.5 A;IB = 0.33 A
-
1.5
V
BEsat
Base-emitter saturation voltage
I
C = 2.5 A;IB = 0.33 A
-
1.3
V
h
FE
DC current gain
I
C = 5 mA; VCE = 5 V
10
20
35
h
FE
I
C = 0.5 A; VCE = 5 V
14
22
35
h
FEsat
I
C = 2.5 A; VCE = 5 V
9
13
17
DYNAMIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times resistive load
I
Con = 2.5 A; IBon = 0.5 A; -IBoff = 0.5 A
t
on
Turn-on time
0.6
1.0
s
t
s
Turn-off storage time
3.4
4.0
s
t
f
Turn-off fall time
0.6
0.8
s
Switching times inductive load
I
Con = 2.5 A; IBon = 0.5 A; LB = 1 H;
-V
BB = 5 V
t
s
Turn-off storage time
1.1
1.4
s
t
f
Turn-off fall time
80
150
ns
I
Con = 2.5 A; IBon = 0.5 A; LB = 1 H;
-V
BB = 5 V; Tj = 100 C
t
s
Turn-off storage time
1.2
1.5
s
t
f
Turn-off fall time
140
300
ns
Fig.1. Test circuit for V
CEOsust.
Fig.2. Oscilloscope display for V
CEOsust.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
1 Measured with half sine-wave voltage (curve tracer).
April 2002
2
Rev 2.000
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