參數(shù)資料
型號(hào)： 934050210127
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 45K
代理商： 934050210127
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AI
GENERAL DESCRIPTION
Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high
frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control
systems etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1000
V
CEO
Collector-emitter voltage (open base)
-
450
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
10
A
P
tot
Total power dissipation
T
mb ≤ 25 C
-
100
W
V
CEsat
Collector-emitter saturation voltage
I
C = 2.5 A; IB = 0.33 A
-
1.5
V
I
Csat
Collector Saturation current
2.5
A
t
f
Inductive fall time
I
Con = 2.5 A; IBon = 0.5 A
0.08
0.15
s
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1000
V
CEO
Collector-emitter voltage (open base)
-
450
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
10
A
I
B
Base current (DC)
-
2
A
I
BM
Base current peak value
-
4
A
P
tot
Total power dissipation
T
mb ≤
25 C
-
100
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
1.25
K/W
R
th j-a
Junction to ambient
in free air
-
60
K/W
12 3
tab
b
c
e
April 2002
1
Rev 2.000
相關(guān)PDF資料
PDF描述
934050230115 5 A, 10 V, NPN, Si, POWER TRANSISTOR
934050240115 5 A, 10 V, PNP, Si, POWER TRANSISTOR
934050290215 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
934054140215 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
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