參數(shù)資料
型號: 934047480115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC CMPAK-4
文件頁數(shù): 5/12頁
文件大小: 116K
代理商: 934047480115
1998 Jul 06
2
Philips Semiconductors
Product specication
UHF power transistor
BFG21W
FEATURES
High power gain
High efficiency
1.9 GHz operating area
Linear and non-linear operation.
APPLICATIONS
Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc.
Driver for DCS1800, 1900.
DESCRIPTION
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
PINNING
PIN
DESCRIPTION
1, 3
emitter
2
base
4
collector
Fig.1 Simplified outline SOT343R.
Marking code: P1.
handbook, halfpage
Top view
MSB842
21
4
3
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(dBm)
Gp
(dB)
ηC
(%)
Pulsed class-AB;
δ < 1 : 2; tp = 5 ms
1.9
3.6
26
≥10
typ.55
相關(guān)PDF資料
PDF描述
934049750127 12 A, NPN, Si, POWER TRANSISTOR
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