參數(shù)資料
型號(hào): 934047460135
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, CMPAK-4
文件頁數(shù): 6/12頁
文件大?。?/td> 104K
代理商: 934047460135
1998 Mar 11
3
Philips Semiconductors
Product specication
NPN 22 GHz wideband transistor
BFG410W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the emitter pins.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
10
V
VCEO
collector-emitter voltage
open base
4.5
V
VEBO
emitter-base voltage
open collector
1V
IC
collector current (DC)
12
mA
Ptot
total power dissipation
Ts ≤ 110 °C; note 1; see Fig.2
54
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
Fig.2 Power derating curve.
handbook, halfpage
0
60
Ptot
(mW)
40
20
0
40
80
160
120
Ts (°C)
MGD960
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
750
K/W
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