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參數(shù)資料
| 型號： | 934045800114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 934045800114 |
1998 Nov 25
4
Philips Semiconductors
Product specication
Microwave power transistor
BLS2731-20
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 2.7 GHz.
(3) f = 2.9 GHz.
Fig.2
Load power as a function of drive power;
typical values.
handbook, halfpage
0
2.5
MGR731
25
0
20
15
10
5
PL
(W)
PD (W)
0.5
1
1.5
2
(2)
(3)
(1)
Fig.3
Power gain as function of frequency;
typical values.
VCB = 40 V; class-C; PL = 20 W; tp = 100 s; δ = 10%.
handbook, halfpage
16
12
4
0
8
MGR732
2.7
2.8
2.9
3.1
3.0
f (GHz)
Gp
(dB)
Fig.4
Input impedance as function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL =20W.
handbook, halfpage
25
0
20
MGR733
15
10
5
2.7
2.8
2.9
3.1
3.0
Zi
(
)
f (GHz)
ri
xi
Fig.5
Load impedance as function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL =20W.
handbook, halfpage
2.7
2.8
2.9
3.1
20
10
15
MGR734
3.0
5
0
5
ZL
(
)
f (GHz)
RL
XL
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