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參數(shù)資料
| 型號： | 934045800114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 934045800114 |
1998 Nov 25
3
Philips Semiconductors
Product specication
Microwave power transistor
BLS2731-20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance at Th =25 °C in a common-base test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
75
V
VCES
collector-emitter voltage
RBE =0
75
V
VEBO
emitter-base voltage
open collector
2V
ICM
peak collector current
tp ≤ 100 s; δ≤ 10%
3A
Ptot
total power dissipation
tp = 100 s; δ = 10%;
Tmb =25 °C
270
W
Tstg
storage temperature
65
+200
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
up to 0.2 mm from ceramic cap;
t
≤ 10 s
235
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Zth j-h
thermal impedance from junction to heatsink
tp = 100 s; δ = 10%; note 1
0.65
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 5 mA; open emitter
75
V
V(BR)CES
collector-emitter breakdown
voltage
IC = 5 mA; VBE =0
75
V
ICBO
collector leakage current
VCB = 40 V; IE =0
0.5
mA
ICES
collector leakage current
VCE = 40 V; VBE =0
0.5
mA
IEBO
emitter leakage current
VEB = 1.5 V; IC =0
0.1
mA
hFE
DC current gain
VCB =5V; IC = 0.5 A
40
Cc
collector capacitance (die only)
VCE =1V; IE =ie = 0; f = 1 MHz
10
pF
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Class-C; tp = 100 s; δ = 10%
2.7 to 3.1
40
≥20
typ. 25
≥9
typ. 10
≥35
typ. 40
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