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參數(shù)資料
| 型號(hào)： | 934045310115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10.7 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大小： | 69K |
| 代理商： | 934045310115 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7840-55
Standard level FET
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 5 A; VGS = 10 V
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
02
468
10
0
5
10
15
20
4.0
4.5
5.0
5.5
6.0
6.5
8.0
10
16
ID/A
VGS/V =
2
4
6
8
10
12
14
16
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20
gfs/S
ID/A
0
5
10
15
20
25
0
10
20
30
40
50
60
70
80
RDS(ON)/mOhm
VGS/V =
ID/A
10
8
7
6.5
6
5.5
BUK98XX-55
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
Tmb / degC
Rds(on) normalised to 25degC
a
012
3
456
7
0
5
10
15
20
ID/A
VGS/V
Tj/C =
150
25
BUK78xx-55
-100
-50
0
50
100
150
200
0
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
January 1998
4
Rev 1.000
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