參數(shù)資料
型號: 934045310115
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 10.7 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, SC-73, 4 PIN
文件頁數(shù): 1/9頁
文件大?。?/td> 69K
代理商: 934045310115
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7840-55
Standard level FET
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
SYMBOL
PARAMETER
MAX.
UNIT
level field-effect power transistor in a
plastic envelope suitable for surface
V
DS
Drain-source voltage
55
V
mounting. Using ’trench’ technology
I
D
Drain current
10.7
A
the device features very low on-state
P
tot
Total power dissipation
1.8
W
resistance and has integral zener
T
j
Junction temperature
150
C
diodes giving ESD protection. It is
R
DS(ON)
Drain-source on-state
40
m
intended for use in automotive and
resistance
V
GS = 10 V
general
purpose
switching
applications.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
55
V
DGR
Drain-gate voltage
R
GS = 20 k
-55
V
±V
GS
Gate-source voltage
-
16
V
I
D
Drain current (DC)
T
sp = 25 C
-
10.7
A
I
D
Drain current (DC)
On PCB in Fig.19
-
5
A
T
amb = 25 C
I
D
Drain current (DC)
On PCB in Fig.19
-
3.1
A
T
amb = 100 C
I
DM
Drain current (pulse peak value)
T
sp = 25 C
-
40
A
P
tot
Total power dissipation
T
sp = 25 C
-
10.7
W
P
tot
Total power dissipation
On PCB in Fig.19
-
1.8
W
T
amb = 25 C
T
stg, Tj
Storage & operating temperature
-
- 55
150
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model
-
2
kV
voltage
(100 pF, 1.5 k
)
d
g
s
4
1
23
January 1998
1
Rev 1.000
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