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參數(shù)資料
| 型號： | 934043610115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 80 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-70, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 79K |
| 代理商： | 934043610115 |
2000 Mar 10
3
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BSN20W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board.
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
50
V
VGSO
gate-source voltage (DC)
open drain
±20
V
ID
drain current (DC)
80
mA
IDM
peak drain current
300
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID =10 A50
V
VGSth
gate-source threshold voltage
VGS =VDS; ID = 1 mA
0.4
1.8
V
IDSS
drain-source leakage current
VGS = 0; VDS =40V
1
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
±100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID =80mA
815
VGS =5V; ID =80mA
14
20
VGS = 2.5 V; ID =10mA
18
30
Ciss
input capacitance
VGS = 0; VDS =10V; f=1MHz
815
pF
Coss
output capacitance
VGS = 0; VDS =10V; f=1MHz
715
pF
Crss
reverse transfer capacitance
VGS = 0; VDS =10V; f=1MHz
25pF
Switching times
ton
turn-on time
VGS = 0 to 10 V; VDD =20V;
ID =80mA
25ns
toff
turn-off time
VGS =10to0V; VDD =20V;
ID =80mA
510
ns
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 934044080115 | 制造商:NXP Semiconductors 功能描述:Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R |
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| 93405-0006 | 制造商:MOLEX 制造商全稱:Molex Electronics Ltd. 功能描述:REVERSE FOOTPRINT PICOFLEX SMT HEADER |
| 93405-0008 | 制造商:MOLEX 制造商全稱:Molex Electronics Ltd. 功能描述:REVERSE FOOTPRINT PICOFLEX SMT HEADER |
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