參數(shù)資料
型號: 934043610115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 80 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, SC-70, 3 PIN
文件頁數(shù): 2/8頁
文件大小: 79K
代理商: 934043610115
2000 Mar 10
2
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BSN20W
FEATURES
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
APPLICATIONS
Thin and thick film circuits
General purpose fast switching applications.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a 3 pin plastic SOT323 SMD package.
PINNING - SOT323
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
g
gate
2
s
source
3
d
drain
Fig.1 Simplified outline and symbol.
Marking code: M8- = made in Hong Kong; M8t = made in Malaysia
(or Bangkok).
handbook, halfpage
12
3
Top view
MAM356
s
d
g
QUICK REFERENCE DATA
Note
1. Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VDS
drain-source voltage (DC)
50
V
VGSth
gate-source threshold voltage
1.8
V
ID
drain current (DC)
80
mA
RDSon
drain-source on-state resistance
15
Ptot
total power dissipation
Tamb ≤ 25 °C;
note 1
200
mW
相關(guān)PDF資料
PDF描述
934043620118 6400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
934043630118 4000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
934043640118 6400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
934043650115 10 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
934043660135 5.7 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
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