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參數(shù)資料
| 型號： | 934023010115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 106K |
| 代理商： | 934023010115 |
1995 Sep 04
4
Philips Semiconductors
Product specication
NPN 7 GHz wideband transistor
BFG591
CHARACTERISTICS
Tj =25 °C (unless otherwise specied).
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
2. dim = 60 dB (DIN45004B);
Vp =Vo; Vq =Vo 6 dB; Vr =Vo 6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q-r) = 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 0.1 mA; IE =0
20
V
V(BR)CES
collector-emitter breakdown voltage
IC = 10 mA; IB =0
15
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.1 mA; IC =0
3V
ICBO
collector-base leakage current
IE = 0; VCB =10V
100
nA
hFE
DC current gain
IC = 70 mA; VCE = 8 V
6090250
Cre
feedback capacitance
IB =Ib = 0; VCE =12V;
f = 1 MHz
0.7
pF
fT
transition frequency
IC = 70 mA; VCE =12V;
f = 1 GHz
7
GHz
GUM
maximum unilateral power gain;
note 1
IC = 70 mA; VCE =12V;
f = 900 MHz; Tamb =25 °C
13
dB
IC = 70 mA; VCE =12V;
f = 2 GHz; Tamb =25 °C
7.5
dB
insertion power gain
IC = 70 mA; VCE =12V;
f = 1 GHz; Tamb =25 °C
12
dB
Vo
output voltage
note 2
700
mV
s
21
2
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
------------------------------------------------------------ dB.
log
=
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