參數(shù)資料
型號: 934023010115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SC-73, 4 PIN
文件頁數(shù): 2/12頁
文件大?。?/td> 106K
代理商: 934023010115
1995 Sep 04
10
Philips Semiconductors
Product specication
NPN 7 GHz wideband transistor
BFG591
SPICE parameters for the BFG591 crystal
Note
1. These parameters have not been extracted, the
default values are shown.
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
1.341
fA
2
BF
123.5
3
NF
.988
m
4
VAF
75.85
V
5
IKF
9.656
A
6
ISE
232.2
fA
7
NE
2.134
8
BR
10.22
9
NR
1.016
10
VAR
1.992
V
11
IKR
294.1
mA
12
ISC
211.0
aA
13
NC
997.2
14
RB
5.00
15
IRB
1.000
A
16
RBM
5.00
17
RE
1.275
18
RC
920.6
m
19 (1)
XTB
0.000
20 (1)
EG
1.110
EV
21 (1)
XTI
3.000
22
CJE
3.821
pF
23
VJE
600.0
mV
24
MJE
348.5
m
25
TF
13.60
ps
26
XTF
71.73
27
VTF
10.28
V
28
ITF
1.929
A
29
PTF
0.000
deg
30
CJC
1.409
pF
31
VJC
219.4
mV
32
MJC
166.5
m
33
XCJ
2.340
m
34
TR
543.7
ns
35 (1)
CJS
0.000
F
36 (1)
VJS
750.0
mV
37 (1)
MJS
0.000
38
FC
733.2
m
List of components (see Fig.15)
DESIGNATION
VALUE
UNIT
Cbe
182
fF
Ccb
16
fF
Cce
249
fF
L1
0.025
nH
L2
1.19
nH
L3
0.60
nH
LB
1.50
nH
LE
0.50
nH
QLB = 50; QLE = 50; QLB,E(f)=QLB,E√(f/fc);
fc = scaling frequency = 1 GHz.
Fig.15 Package equivalent circuit SOT223.
handbook, halfpage
MBC964
B
E
C
B'
C'
E'
L B
L E
L3
L1
L2
C cb
Cbe
ce
C
相關PDF資料
PDF描述
934023500135 350 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
934023500115 350 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
934023530126 250 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
0598760000 24 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK
934023940135 1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
934026020115 制造商:NXP Semiconductors 功能描述:Diode Switching 90V 0.15A 3-Pin SC-70 T/R
934028880135 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY 30V 0.2A SC70
934028900115 制造商:NXP Semiconductors 功能描述:Diode Schottky 30V 0.2A 3-Pin SC-70 T/R
93403 制造商:Brady Corporation 功能描述:
93-403 制造商:Southco 功能描述: