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參數(shù)資料
| 型號(hào)： | 934022980215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | 934022980215 |
1998 Oct 02
3
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistors
BFG590; BFG590/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
200
mA
Ptot
total power dissipation
Ts ≤ 60 °C; see Fig.2; note 1
400
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
175
°C
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
600
200
0
400
MBG249
150
P
tot
(mW)
T
s
(o C)
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
Ts ≤ 60 °C; note 1
290
K/W
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