參數(shù)資料
型號: 934022980215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 7/12頁
文件大?。?/td> 105K
代理商: 934022980215
1998 Oct 02
4
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistors
BFG590; BFG590/X
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 0.1 mA; IE =0
20
V
V(BR)CEO
collector-emitter breakdown voltage IC = 10 mA; IB =0
15
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.1 mA; IC =0
3
V
ICBO
collector-base leakage current
VCB =10V; IE =0
100
nA
hFE
DC current gain
IC = 70 mA; VCE = 8 V; see Fig.3
60
120
250
fT
transition frequency
IC = 80 mA; VCE =4V;
f = 1 GHz; see Fig.5
5
GHz
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz;
see Fig.4
0.7
pF
GUM
maximum unilateral power gain;
note 1
IC = 80 mA; VCE =4V;
f = 900 MHz; Tamb =25 °C
13
dB
IC = 80 mA; VCE = 4 V; f = 2 GHz;
Tamb =25 °C
7.5
dB
|S21|2
insertion power gain
IC = 80 mA; VCE =4V;
f = 900 MHz; Tamb =25 °C
11
dB
G
UM
10
S
21
2
1S
11
2
() 1S
22
2
()
-------------------------------------------------------------- dB.
log
=
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