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| 型號： | 934022730215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 79K |
| 代理商： | 934022730215 |
1995 Apr 07
5
Philips Semiconductors
Product specication
NPN 2 GHz RF power transistor
BFG11; BFG11/X
APPLICATION INFORMATION
RF performance at Tamb =25 °C in a common-emitter test circuit (see Fig.7).
Ruggedness in class-AB operation
The BFG11 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 8 V, f = 1.9 GHz and a duty cycle of 1 : 8.
MODE OF OPERATION
f
(GHz)
VCE
(V)
ICQ
(mA)
PL
(mW)
Gp
(dB)
ηc
(%)
Pulsed, class-AB, duty cycle < 1 : 8
1.9
3.6
1
400
≥4
≥50
typ. 5
typ. 70
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 400 mW.
Fig.4
Power gain and collector efficiency as
functions of load power; typical values.
handbook, halfpage
0
8
0
MLC849
2
4
6
100
20
40
60
80
200
400
600
800
G p
(dB)
P (mW)
L
c
(%)
η
c
η
Fig.5
Load power as a function of drive power;
typical values.
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 400 mW.
handbook, halfpage
0
100
200
300
800
0
MLC850
600
400
200
P L
(mW)
P (mW)
D
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