參數(shù)資料
型號: 934022730215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 6/12頁
文件大?。?/td> 79K
代理商: 934022730215
1995 Apr 07
3
Philips Semiconductors
Product specication
NPN 2 GHz RF power transistor
BFG11; BFG11/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
8V
VEBO
emitter-base voltage
open collector
2.5
V
IC
collector current (DC)
500
mA
IC(AV)
average collector current
500
mA
Ptot
total power dissipation
up to Ts =60 °C; note 1; see Fig.2
400
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
175
°C
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
0
MLC818
150
T ( C)
o
s
Ptot
(mW)
300
500
400
100
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts =60 °C; note 1;
Ptot = 400 mW
290
K/W
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