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參數(shù)資料
| 型號(hào)： | 934020570127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | 934020570127 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYR10100 series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 60 V/ 80 V/ 100 V
Reverse surge capability
High thermal cycling performance
I
F(AV) = 10 A
Low thermal resistance
V
F ≤ 0.7 V
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Schottky rectifier diodes in a plastic
PIN
DESCRIPTION
envelope. Intended for use as
output rectifiers in low voltage, high
1
cathode
frequency switched mode power
supplies.
2
anode
The PBYR10100 series is supplied
tab
cathode
in the conventional leaded SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
60
80
100
V
RRM
Peak repetitive reverse
-
60
80
100
V
voltage
V
RWM
Working peak reverse
-
60
80
100
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 139 C
-
60
80
100
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 133 C
-
10
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 133 C
-
20
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
2
K/W
to mounting base
R
th j-a
Thermal resistance junction
in free air
-
60
-
K/W
to ambient
k
a
12
1
tab
2
March 1998
1
Rev 1.200
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