參數(shù)資料
型號: 934020640127
廠商: NXP SEMICONDUCTORS
元件分類: 整流器
英文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 1/6頁
文件大小: 46K
代理商: 934020640127
Philips Semiconductors
Product specification
Rectifier diodes
PBYR20100CT, PBYR20100CTB series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 60 V/ 80 V/ 100 V
Reverse surge capability
High thermal cycling performance
I
O(AV) = 20 A
Low thermal resistance
V
F ≤ 0.7 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR20100CT series is supplied in the SOT78 conventional leaded package.
The PBYR20100CTB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR20
60CT
80CT
100CT
PBYR20
60CTB 80CTB 100CTB
V
RRM
Peak repetitive reverse
-
60
80
100
V
voltage
V
RWM
Working peak reverse
-
60
80
100
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 139 C
-
60
80
100
V
I
O(AV)
Average rectified output
square wave;
δ = 0.5;
-
20
A
current (both diodes
T
mb ≤ 133 C
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5;
-
20
A
current per diode
T
mb ≤ 133 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current per diode
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
1. It is not possible to make connection to pin 2 of the SOT404 package.
k
a1
a2
13
2
13
tab
2
12 3
tab
November 1998
1
Rev 1.300
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