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參數(shù)資料
| 型號： | 934019200112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 1000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 50K |
| 代理商： | 934019200112 |
2001 Oct 25
3
Philips Semiconductors
Product specication
1000 MHz, 18.5 dB gain push-pull amplier
BGY1085A
CHARACTERISTICS
Table 1
Bandwidth 40 to 1000 MHz; Tcase =30 °C; ZS =ZL =75
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18
19
dB
f = 1000 MHz
18.5
dB
SL
slope cable equivalent
f = 40 to 1000 MHz
0
2dB
FL
atness of frequency response
f = 40 to 1000 MHz
±0.3
dB
S11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
18.5
dB
f = 160 to 320 MHz
17
dB
f = 320 to 640 MHz
15.5
dB
f = 640 to 1000 MHz
14
dB
S22
output return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
18.5
dB
f = 160 to 320 MHz
17
dB
f = 320 to 640 MHz
15.5
dB
f = 640 to 1000 MHz
14
dB
CTB
composite triple beat
85 channels at;
Vo = 44 dBmV;
measured at 595.25 MHz
58
dB
110 channels at;
Vo = 44 dBmV;
measured at 745.25 MHz
53
dB
150 channels at;
Vo = 40 dBmV;
measured at 985.25 MHz
53
dB
Xmod
cross modulation
85 channels at;
Vo = 44 dBmV;
measured at 55.25 MHz
58
dB
110 channels at;
Vo = 44 dBmV;
measured at 55.25 MHz
54
dB
150 channels at;
Vo = 40 dBmV;
measured at 55.25 MHz
54
dB
CSO
composite second order
distortion
85 channels at;
Vo = 44 dBmV;
measured at 596.5 MHz
60
dB
110 channels at;
Vo = 44 dBmV;
measured at 746.5 MHz
56
dB
150 channels at;
Vo = 40 dBmV;
measured at 986.5 MHz
56
dB
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