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參數(shù)資料
| 型號： | 934014580127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 14 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 44K |
| 代理商： | 934014580127 |
Philips Semiconductors
Product specification
Rectifier diodes
BYV79E series
ultrafast, rugged
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 150 V/ 200 V
Fast switching
Soft recovery characteristic
V
F ≤ 0.9 V
Reverse surge capability
High thermal cycling performance
I
F(AV) = 14 A
Low thermal resistance
I
RRM ≤ 0.2 A
t
rr ≤ 30 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in high frequency switched mode
1
cathode
power supplies.
2
anode
The BYV79E series is supplied in
the conventional leaded SOD59
tab
cathode
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV79E
-150
-200
V
RRM
Peak repetitive reverse voltage
-
150
200
V
RWM
Crest working reverse voltage
-
150
200
V
R
Continuous reverse voltage
T
mb ≤ 145C
-
150
200
V
I
F(AV)
Average forward current
1
square wave
-
14
A
δ = 0.5; T
mb ≤ 120 C
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
28
A
T
mb ≤ 120 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
150
A
current
t = 8.3 ms
-
160
A
sinusoidal; with reapplied
V
RWM(max)
I
RRM
Repetitive peak reverse current t
p = 2 s; δ = 0.001
-
0.2
A
I
RSM
Non-repetitive peak reverse
t
p = 100 s
-
0.2
A
current
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1. Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
k
a
12
1
tab
2
July 1998
1
Rev 1.200
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