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參數(shù)資料
| 型號(hào)： | 934011880215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | 934011880215 |
September 1995
3
Philips Semiconductors
Product specication
NPN 1 GHz general purpose switching transistor
PMBTH10
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj =25 °C.
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-s
from junction to soldering point (note 1)
260 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 100 A; IE =0
30
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 1 mA; IB =0
25
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE =10 A; IC =0
3
V
VCE sat
collector-emitter saturation voltage
IC = 4 mA; IB = 0.4 mA
0.5
V
VBE on
base-emitter ON voltage
VCE = 10 V; IC = 4 mA
0.95
V
ICBO
collector-base cut-off current
VCB = 25 V; IE =0
100
nA
IEBO
emitter-base cut-off current
VCB = 25 V; IC =0
100
nA
hFE
DC current gain
VCE = 10 V; IC = 4 mA
60
Cre
collector-emitter feedback
capacitance
VCB = 10 V; IE =ie =0;
f = 1 MHz
0.7
pF
Crb
collector-base feedback capacitance
VCB = 10 V; IC =ic =0;
f = 1 MHz
0.35
0.65
pF
fT
transition frequency
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb =25 °C
650
MHz
rbCc
collector-base time constant
VCB = 10 V; IC = 4 mA;
f = 100 MHz; Tamb =25 °C
9ps
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