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參數(shù)資料
| 型號(hào)： | 934011880215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 934011880215 |
September 1995
2
Philips Semiconductors
Product specication
NPN 1 GHz general purpose switching transistor
PMBTH10
FEATURES
Low cost
High power gain.
DESCRIPTION
The PMBTH10 is a general purpose
silicon npn transistor, encapsulated in
a SOT23 plastic envelope. Its pnp
complement is the PMBTH81.
PINNING
PIN
DESCRIPTION
Code: V30
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCEO
collector-emitter voltage
open base
25
V
VEBO
emitter-base voltage
open collector
3V
Ptot
total power dissipation
Ts =45 °C (note 1)
400
mW
hFE
DC current gain
VCE = 10 V; IC = 4 mA
60
Cre
collector-emitter feedback
capacitance
VCB = 10 V; IE = 0; f = 1 MHz
0.7
pF
Crb
collector-base feedback
capacitance
VCB = 10 V; IE = 0; f = 1 MHz
0.35
0.65
pF
fT
transition frequency
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb =25 °C
650
MHz
rbCc
collector-base time constant
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb =25 °C
9ps
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCEO
collector-emitter voltage
open base
25
V
VEBO
emitter-base voltage
open collector
3V
IC
DC collector current
40
mA
Ptot
total power dissipation
Ts =45 °C (note 1)
400
mW
Tstg
storage temperature
65
150
°C
Tj
junction temperature
150
°C
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