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參數(shù)資料
| 型號： | 934009430115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 52K |
| 代理商： | 934009430115 |
2002 Nov 15
3
Philips Semiconductors
Product specication
PNP medium power transistor
BCP69
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
91
K/W
Rth j-s
thermal resistance from junction to soldering point
10
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 25 V
100 nA
IE = 0; VCB = 25 V; Tj = 150 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
100 nA
hFE
DC current gain
IC = 5 mA; VCE = 10 V
50
IC = 500 mA; VCE = 1 V; see Fig.2
85
375
IC = 1 A; VCE = 1 V; see Fig.2
60
DC current gain
IC = 500 mA; VCE = 1 V; see Fig.2
BCP69-16
100
250
BCP69-25
160
375
DC current gain
IC = 10 mA; VCE = 1.8 V; see Fig.3
BCP69-16/IN
140
230
VCEsat
collector-emitter saturation voltage IC = 1 A; IB = 100 mA
500 mV
VBE
base-emitter voltage
IC = 5 mA; VCE = 10 V
620
mV
IC = 1 A; VCE = 1V
1V
Cc
collector capacitance
IE =ie = 0; VCB = 5V; f=1MHz
48
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 40
MHz
DC current gain ratio of the
complementary pairs
I
C = 0.5 A; VCE =1V
1.6
h
FE1
h
FE2
-----------
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