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參數(shù)資料
| 型號： | 934009430115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 934009430115 |
2002 Nov 15
2
Philips Semiconductors
Product specication
PNP medium power transistor
BCP69
FEATURES
High current (max. 1 A)
Low voltage (max. 20 V).
APPLICATIONS
General purpose switching and amplification
Power applications such as audio output stages.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complement: BCP68.
PINNING
PIN
DESCRIPTION
1
base
2, 4
collector
3
emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
12
3
MAM288
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
32
V
VCEO
collector-emitter voltage
open base
20
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
1A
ICM
peak collector current
2A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.35
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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