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參數(shù)資料
| 型號(hào)： | 933943950115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243 |
| 封裝： | PLASTIC, SMD, SC-62, 3 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | 933943950115 |
2002 May 22
3
Philips Semiconductors
Product specication
P-channel enhancement mode
vertical D-MOS transistor
BSS192
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a ceramic substrate; area 2.5 cm2; thickness 0.7 mm.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a ceramic substrate; area 2.5 cm2; thickness 0.7 mm.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
240
V
VGSO
gate-source voltage (DC)
open drain
±20
V
ID
drain current (DC)
200
mA
IDM
peak drain current
600
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 10 A
240
V
VGSth
gate-source threshold voltage
VGS =VDS; ID = 1mA
0.8
2.8
V
IDSS
drain-source leakage current
VGS = 0; VDS = 60 V
200 nA
VGS = 0.2 V; VDS = 200 V
0.1
60
A
IGSS
gate leakage current
VDS = 0; VGS = ±20 V
±100 nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 200 mA
10
12
yfs
forward transfer admittance
VDS = 25 V; ID = 200 mA
60
200
mS
Ciss
input capacitance
VGS = 0; VDS = 25 V; f = 1 MHz
55
90
pF
Coss
output capacitance
VGS = 0; VDS = 25 V; f = 1 MHz
20
30
pF
Crss
reverse transfer capacitance
VGS = 0; VDS = 25 V; f = 1 MHz
515
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
VGS =0to 10 V; VDD = 50 V;
ID = 250 mA
510
ns
toff
turn-off time
VGS = 10 to 0 V; VDD = 50 V;
ID = 250 mA
20
30
ns
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