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參數(shù)資料
| 型號： | 933943940115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 400 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243 |
| 封裝： | PLASTIC, SMD, SC-62, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 933943940115 |
2001 May 18
3
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BSS87
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10
× 10 mm
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 250 A; VGS = 0
200
V
IDSS
drain-source leakage current
VDS =60V; VGS =0
200
nA
VDS = 200 V; VGS =0
0.1
60
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
±100
nA
VGSth
gate-source threshold voltage
ID = 1 mA; VGS =VDS
0.8
2.8
V
RDSon
drain-source on-state resistance
ID = 400 mA; VGS =10V
1.6
3
Y
fs
transfer admittance
ID = 400 mA; VDS = 25 V
140
750
mS
Ciss
input capacitance
VDS =25V; VGS =0;
f = 1 MHz
100
120
pF
Coss
output capacitance
VDS =25V; VGS =0;
f = 1 MHz
20
30
pF
Crss
reverse transfer capacitance
VDS =25V; VGS =0;
f = 1 MHz
10
15
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 250 mA; VDD =50V;
VGS = 0 to 10 V
610
ns
toff
turn-off time
ID = 250 mA; VDD =50V;
VGS = 0 to 10 V
49
60
ns
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