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參數(shù)資料
| 型號(hào)： | 933930100112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | 933930100112 |
1997 Nov 07
5
Philips Semiconductors
Product specication
NPN 6.5 GHz wideband transistor
BFQ135
Fig.2 Intermodulation distortion test circuit.
L1 = 8 nH.
L2 = 15 nH (2 turns copper wire, internal diameter 2 mm).
L3 = 10 nH (2 turns copper wire, internal diameter 1.5 mm).
L5: Lp = 21 mm; Rc = 75
.
L6: Lp = 16 mm; Rc = 75
.
handbook, full pagewidth
MEA260
DUT
,
VBB
10 k
10 nF
1 pF
L5
input
75
240
L2
33
33
L3
10 nF
1 pF
10 nF
L4
output
75
VCC
L1
10 nF
L6
4.7
F
10 nF
Fig.3
DC current gain as a function of collector
current; typical values.
VCE = 18 V; Tamb =25 °C.
handbook, halfpage
0
160
120
80
40
80
160
MBB294
120
I
(mA)
C
FE
h
Fig.4
Transition frequency as a function of
collector current; typical values.
VCE = 18 V; f = 1 GHz; Tamb =25 °C.
handbook, halfpage
0
40
80
160
8
6
2
0
4
MBB296
120
I
(mA)
C
(GHz)
T
f
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