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參數(shù)資料
| 型號(hào)： | 933930100112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大小： | 78K |
| 代理商： | 933930100112 |
1997 Nov 07
4
Philips Semiconductors
Product specication
NPN 6.5 GHz wideband transistor
BFQ135
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
.
2. dim = 60 dB (DIN 45004B); IC = 120 mA; VCE = 18 V; RL =75 ; Tamb =25 °C;
Vp =VO at dim = 60 dB; fp = 445.25 MHz;
Vq =VO 6 dB; fq = 453.25 MHz;
Vr =VO 6 dB; fr = 455.25 MHz;
measured at fp +fq fr = 443.25 MHz.
3. dim = 60 dB (DIN 45004B); IC = 120 mA; VCE = 18 V; RL =75 ; Tamb =25 °C;
Vp =VO at dim = 60 dB; fp = 795.25 MHz;
Vq =VO 6 dB; fq = 803.25 MHz;
Vr =VO 6 dB; fr = 805.25 MHz;
measured at fp +fq fr = 793.25 MHz.
4. IC = 90 mA; VCE = 18 V; VO = 50 dBmV; Tamb =25 °C;
fp = 50 MHz; fq = 400 MHz;
measured at fp +fq = 450 MHz.
5. IC = 90 mA; VCE = 18 V; VO = 50 dBmV; Tamb =25 °C;
fp = 250 MHz; fq = 560 MHz;
measured at fp +fq = 810 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =18V
50
A
hFE
DC current gain
IC = 120 mA; VCE =18V;
Tamb =25 °C
55
Cc
collector capacitance
IE =ie = 0; VCB = 18 V; f = 1 MHz
1.8
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
5.5
pF
Cre
feedback capacitance
IC = 0; VCE =18V; f=1MHz
1
1.2
pF
fT
transition frequency
IC = 120 mA; VCE =18V;
f = 1 GHz; Tamb =25 °C
6.5
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 120 mA; VCE =18V;
f = 500 MHz; Tamb =25 °C
17
dB
IC = 120 mA; VCE =18V;
f = 800 MHz; Tamb =25 °C
13.5
dB
VO
output voltage
note 2
1.35
V
note 3
1.2
V
d2
second order intermodulation
distortion
note 4
70
dB
note 5
70
dB
G
UM
10 log
S
21
2
1
S
11
2
–
1
S
22
2
–
-------------------------------------------------------------- dB˙
=
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