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參數(shù)資料
| 型號(hào)： | 933930000112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | 933930000112 |
2001 May 23
4
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF147
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 100 mA; VGS = 0
65
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
5mA
IGSS
gate-source leakage current
±V
GS = 20 V; VDS = 0
1
A
VGS(th)
gate-source threshold voltage
ID = 200 mA; VDS = 10 V
2
4.5
V
GS
gate-source voltage difference of
matched pairs
ID = 100 mA; VDS = 10 V
100
mV
gfs
forward transconductance
ID = 8 A; VDS = 10 V
5
7.5
S
RDS(on)
drain-source on-state resistance
ID = 8 A; VGS = 10 V
0.1
0.15
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
37
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
450
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
360
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
55
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
VDS = 28 V; valid for Th = 25 to 70 °C.
handbook, halfpage
0
5
MGP050
101
110
102
4
3
2
1
T.C.
(mV/K)
ID (A)
Fig.5
Drain current as a function of gate-source
voltage, typical values.
VDS = 10 V.
handbook, halfpage
0
60
40
20
0
510
20
15
MGP051
VGS (V)
ID
(A)
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