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參數(shù)資料
| 型號： | 933930000112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 78K |
| 代理商： | 933930000112 |
2001 May 23
2
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF147
FEATURES
High power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to 'General' section for further
information.
PINNING - SOT121
PIN
DESCRIPTION
1
drain
2
source
3
gate
4
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
ook, halfpage
MLA876
43
2
1
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
d3
(dB)
d5
(dB)
SSB, class-AB
28
150 (PEP)
> 17
> 35
<30
CW, class-B
108
28
150
typ. 14
typ. 70
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