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參數(shù)資料
| 型號(hào)： | 933929750215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 933929750215 |
April 1995
4
Philips Semiconductors
Product specication
N-channel junction FETs
PMBFJ111;
PMBFJ112; PMBFJ113
DYNAMIC CHARACTERISTICS
Tj =25 °C.
Notes
1. Test conditions for switching times are as follows:
VDD = 10 V, VGS = 0 to VGS(off) (all types);
VGS(off) = 12 V, RL = 750 (PMBFJ111);
VGS(off) = 7 V, RL = 1550 (PMBFJ112);
VGS(off) = 5 V, RL = 3150 (PMBFJ113).
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Ciss
input capacitance
VDS = 0
VGS = 10 V
f = 1 MHz
6
pF
VDS = 0
VGS =0
f = 1 MHz
Tamb =25 °C
22
28
pF
Crss
feedback capacitance
VDS = 0
VGS = 10 V
f = 1 MHz
3
pF
Switching times (see Fig.2)
tr
rise time
note 1
6
ns
ton
turn-on time
note 1
13
ns
tf
fall time
note 1
15
ns
toff
turn-off time
note 1
35
ns
Fig.2 Switching circuit.
ok, halfpage
MBK289
50
RL
DUT
10
F
1
F
VDD
10 nF
50
SAMPLING
SCOPE
50
Fig.3 Input and output waveforms.
MBK294
VGS off
toff
tf
ts
VGS = 0 V
Vi
Vo
10%
90%
10%
ton
tr
td
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