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參數(shù)資料
| 型號(hào)： | 933929750215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 36K |
| 代理商： | 933929750215 |
April 1995
3
Philips Semiconductors
Product specication
N-channel junction FETs
PMBFJ111;
PMBFJ112; PMBFJ113
THERMAL CHARACTERISTICS
Tj =P(Rth j-t + Rth ts + Rth s-a) + Tamb
Notes
1. Mounted on a ceramic substrate, 8 mm
× 10 mm × 0.7 mm.
2. Mounted on printed circuit board.
STATIC CHARACTERISTICS
Tj =25 °C.
SYMBOL
PARAMETER
MAX.
UNIT
Rth j-a
from junction to ambient (note 1)
430
K/W
Rth j-a
from junction to ambient (note 2)
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IGSS
reverse gate current
VGS = 15 V; VDS =0
1nA
IDSS
drain current
VGS = 0; VDS = 15 V
PMBFJ111
20
mA
PMBFJ112
5
PMBFJ113
2
V
(BR)GSS
gate-source breakdown voltage
IG =1 A; VDS =0
40
V
VGS(off)
gate-source cut-off voltage
ID =1 A; VDS =5 V
PMBFJ111
3
10 V
PMBFJ112
1
5
PMBFJ113
0.5
3
RDS(on)
drain-source on-resistance
VGS = 0 V; VDS = 0.1 V
PMBFJ111
30
PMBFJ112
50
PMBFJ113
100
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