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參數(shù)資料
| 型號(hào)： | 933929390116 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 36K |
| 代理商： | 933929390116 |
April 1989
3
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
PN4391 to 4393
THERMAL RESISTANCE
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specied
From junction to ambient in free air
Rth j-a
=
350
K/W
PN4391
PN4392
PN4393
Reverse gate current
V
GS = 20 V; VDS =0
IGSS
max.
1.0
1.0 nA
VGS = 20 V; VDS =0
Tamb = 100 °C
IGSS
max.
200
200 nA
Drain cut-off current
VGS = 12 V
VDS = 20 V
IDSX
max.
1.0
nA
V
GS =7 V
IDSX
max.
1.0
nA
V
GS =5 V
IDSX
max.
1.0 nA
VGS = 12 V
VDS = 20 V;
Tamb = 100 °C
IDSX
max.
200
nA
V
GS =7 V
IDSX
max.
200
nA
V
GS =5 V
IDSX
max.
200 nA
Drain saturation current
VDS = 20 V; VGS =0
IDSS
min.
50
25
5 mA
max.
150
100
60 mA
Gate-source breakdown voltage
I
G =1 A; VDS =0
V(BR)GSS
min.
40
40 V
Gate-source cut-off voltage
VDS = 20 V; ID =1nA
VGS off
min.
4.0
2.0
0.5 V
max.
10
5.0
3.0 V
Drain-source on-resistance
ID = 1 mA; VGS =0
RDS on
max.
30
60
100
Drain-source on-voltage
VGS = 0; ID = 12 mA
VDS on
max.
0.4
V
VGS = 0; ID = 6 mA
VDS on
max.
0.4
V
VGS = 0; ID = 3 mA
VDS on
max.
0.4 V
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