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參數(shù)資料
| 型號： | 933929390116 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 36K |
| 代理商： | 933929390116 |
April 1989
2
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
PN4391 to 4393
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
PINNING
Note: Drain and source are
interchangeable.
1
= gate
2
= source
3
= drain
Fig.1 Simplified outline and symbol, TO-92.
handbook, halfpage
1
3
2
MAM042
s
d
g
QUICK REFERENCE DATA
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
± VDS
max.
40
V
Total power dissipation
up to Tamb =25 °CPtot
max.
360
mW
PN4391
PN4392
PN4393
Drain current
VDS = 20 V; VGS =0
IDSS
min.
50
25
5 mA
Gate-source cut-off voltage
VDS = 20 V; ID = 1 nA
VGS off
min.
4
2
0.5 V
max.
10
5
3 V
Drain-source on-resistance
ID = 1 mA; VGS =0
RDS on
max.
30
60
100
Drain-source voltage
± VDS
max.
40
V
Gate-source voltage
V
GSO
max.
40
V
Gate-drain voltage
VGDO
max.
40
V
Forward gate current (DC)
IG
max.
50
mA
Total power dissipation
up to Tamb =25 °CPtot
max.
360
mW
Storage temperature range
Tstg
65 to+150
°C
Junction temperature
Tj
max.
150
°C
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