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參數(shù)資料
| 型號： | 933864370215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 933864370215 |
2003 Mar 18
3
Philips Semiconductors
Product specication
PNP switching transistor
MMBT3906
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 6V
50
nA
hFE
DC current gain
VCE = 1 V; see Fig.2
IC = 0.1 mA
60
IC = 1mA
80
IC = 10 mA
100
300
IC = 50 mA
60
IC = 100 mA
30
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 1mA
250
mV
IC = 50 mA; IB = 5mA
400
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1mA
850
mV
IC = 50 mA; IB = 5mA
950
mV
Cc
collector capacitance
IE =ie = 0; VCB = 5V; f=1MHz
4.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV;
f = 1 MHz
10
pF
fT
transition frequency
IC = 10 mA; VCE = 20 V;
f = 100 MHz
250
MHz
F
noise gure
IC = 100 A; VCE = 5V;
RS =1k; f = 10 Hz to 15.7 kHz
4dB
Switching times (between 10% and 90% levels); see Fig.7
td
delay time
ICon = 10 mA; IBon = 1 mA;
IBoff =1mA
35
ns
tr
rise time
35
ns
ts
storage time
225
ns
tf
fall time
75
ns
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