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參數資料
| 型號： | 933864370215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 66K |
| 代理商： | 933864370215 |
2003 Mar 18
2
Philips Semiconductors
Product specication
PNP switching transistor
MMBT3906
FEATURES
Collector current capability IC = 200 mA
Collector-emitter voltage VCEO = 40 V.
APPLICATIONS
General switching and amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complement: MMBT3904.
MARKING
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
TYPE NUMBER
MARKING CODE(1)
MMBT3906
7B
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
IC
collector current (DC)
200
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
6V
IC
collector current (DC)
200
mA
ICM
peak collector current
200
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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